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World's First Mass-Produced Silicon-Based Gallium Nitride RF Chip for Smart Terminals Delivers Over 5 Million Units
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According to domestic media outlet Science and Technology Daily, China Electronics Technology Group Corporation (CETC) announced that the No.55 Research Institute under CETC has independently developed the world’s first mass-produced silicon-based gallium nitride (GaN) radio frequency (RF) chip for smart terminals, with cumulative deliveries recently exceeding 5 million units. This marks the first large-scale commercial application of silicon-based GaN RF chips in smart terminals globally, providing strong support for full-coverage and high-speed interconnection of integrated space-air-ground information networks. It is reported that this series of silicon-based GaN RF chips features high power, high efficiency, ultra-wide bandwidth and high reliability. The products precisely meet the stringent technical requirements for high efficiency and high linearity in RF power amplifier chips used in integrated space-air-ground communications. The breakthrough effectively addresses industrialization challenges in high-end RF chips, facilitating the development of seamless, full-time and full-coverage space-air-ground communication networks, and accelerating the realization of global seamless connectivity and the Internet of Everything vision. (da/u) Auto-translated by AI This article was automatically translated by AI, the original language version should be considered the authoritative version. AASTOCKS.com Limited does not guarantee its accuracy or completeness and accepts no liability for any damages or losses arising from the use of this translation. More Details
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